TSC741 high voltage fast-switching npn power transistor 1/4 version: b13 to - 2 20 product summary bv ceo 450v bv cbo 1050v i c 2a v ce(sat) 0.5v @ i c =0.7a, i b =0.14a features high voltage capability high switching speed block diagram structure silicon triple diffused type npn silicon transistor ordering information part no. package packing TSC741cz c0 to-220 50pcs / tube absolute maximum rating (t a = 25 o c, unless otherwise noted) parameter symbol limit unit collector-base voltage v cbo 1050 v collector-emitter voltage @ v be =0v v ces 450 v emitter-base voltage v ebo 15 v collector current i c 2 a collector peak current (tp <5ms) i cm 4 a base current i b 1.5 a base peak current (tp <5ms) i bm 3 a power total dissipation @ tc=25oc p dtot 60 w maximum operating junction temperature t j +150 o c storage temperature range t stg -55 to +150 o c note: single pulse. p w = 300us, duty 2% thermal performance parameter symbol limit unit thermal resistance - junction to case r ? jc 1.8 o c/w thermal resistance - junction to ambient r ? ja 62.5 o c/w pin definition : 1. base 2. collector 3. emitter
TSC741 high voltage fast-switching npn power transistor 2/4 version: b13 electrical specifications (t a = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static collector-base voltage i c =0.5ma bv cbo 1050 -- -- v collector-emitter breakdown voltage i c =5ma bv ceo 450 -- -- v emitter-base breakdown voltage i e =1ma bv ebo 15 -- -- v collector cutoff current v ce =400v, i b =0 i ceo -- 10 250 ua collector cutoff current v cb =950v, i e =0 i cbo -- -- 10 ua collector-emitter saturation voltage i c =0.7a, i b =0.14a v ce(sat) 1 --- -- 0.5 v collector-emitter saturation voltage i c =2a, i b =0.6a v ce(sat) 2 --- 1.5 2.0 v base-emitter saturation voltage i c =2a, i b =0.6a v be(sat) 1 -- 1.0 1.5 v dc current gain v ce =5v, i c =100ma h fe 1 50 70 100 v ce =3v, i c =500ma h fe 2 18 24 50 resistive load switching time (ratings) rise time v cc =5v, i c =0.5a, t r -- -- 1 us storage time t stg 2.5 3 3.5 us fall time t f -- -- 1.2 us notes: pulsed duration =380us, duty cycle 2%
TSC741 high voltage fast-switching npn power transistor 3/4 version: b13 to-220 mechanical drawing unit: millimeters marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = l ot code
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